ROHM Semiconductor U.S.A., LLC, will participate in Applied Power Electronics Conference (APEC) 2025, the premier power ...
ROHM’s new resistor family achieves equivalent rated power in a smaller size with a guaranteed stable long-term supply.
Accelerating development towards the mass production of GaN devices for automotive applications ROHM's New GNP2070TD-Z 650V ...
ROHM's EcoGaN Series of 650V GaN HEMTs in the TOLL Package Adopted for Murata's AI Server Power Supplies TOLL package 650V ...
Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package - a packaging technology increasingly being adopted in ...
Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...
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ROHM and TSMC collaborate on GaN power devices for EV marketROHM has entered a strategic partnership with Taiwan Semiconductor Manufacturing Company (TSMC) to develop and mass-produce gallium nitride (GaN) power devices for the electric vehicle (EV ...
ROHM has reported that the EcoGaN series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions. Integrating ROHM's GaN HEMTs, which combine ...
Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the GNP2070TD-Z 650V GaN HEMTs in the TO-Leadless (TOLL) package. Featuring a compact design ...
ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with ...
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